• 文献标题:   Phonon bottleneck effects in rectangular graphene quantum dots
  • 文献类型:   Article
  • 作  者:   QIAN J, DUTTA M, STROSCIO MA
  • 作者关键词:   graphene, quantum dot, confined phonon
  • 出版物名称:   JOURNAL OF COMPUTATIONAL ELECTRONICS
  • ISSN:   1569-8025
  • 通讯作者地址:   Univ Illinois
  • 被引频次:   2
  • DOI:   10.1007/s10825-012-0400-4
  • 出版年:   2012

▎ 摘  要

For a graphene sheet with confining structures in the orthogonal directions of zigzag- and armchair-edge, the confined carrier states are determined. These wavefunctions and eigenvalues are used to study carrier-longitudinal optical (LO)-phonon interactions in these graphene quantum dots. The optical deformation potential is derived for these graphene quantum dots as the basis for the study of these carrier-LO-phonon interactions. Phonon bottleneck effects are identified and the Fermi golden rule transition rates are formulated.