▎ 摘　　要

Graphene transferred onto h-BN has recently become a focus of research because of its excellent compatibility with large-area device applications. The requirements of scalability and clean fabrication, however, have not yet been satisfactorily addressed. The successful synthesis of graphene/h-BN on a Cu foil and DFT calculations for this system are reported, which demonstrate that a thin h-BN film on Cu foil is an excellent template for the growth of large-area and high-quality graphene. Such material can be grown on thin h-BN films that are less than 3 nm thick, as confirmed by optical microscopy and Raman spectroscopy. We have evaluated the catalytic growth mechanism and the limits on the CVD growth of high-quality and large-area graphene on h-BN film/Cu by performing Kelvin probe force microscopy and DFT calculations for various thicknesses of h-BN.