▎ 摘　　要

A channel suspension method to fabricate high performance graphene field effect transistors (GFET) is presented in this paper. The balance is reached between gate efficiency and carrier mobility. A GFET with 15 mu m x 15 mu m gate dimension achieves a high normalized transconductance. Peak intrinsic carrier mobility is extracted to be 44 600 cm(2)v(-1)s(-1). Suspension of the graphene channel is confirmed by AFM, SEM, and gate capacitance measurements. Unlike traditional substrate supported GFET, the proposed suspended-channel structure suppresses the influence of extrinsic scatterings and, meanwhile, maintains a certain gate controllability. (C) 2013 AIP Publishing LLC.