• 文献标题:   Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer
  • 文献类型:   Article
  • 作  者:   SANCHEZYAMAGISHI JD, LUO JY, YOUNG AF, HUNT BM, WATANABE K, TANIGUCHI T, ASHOORI RC, JARILLOHERRERO P
  • 作者关键词:  
  • 出版物名称:   NATURE NANOTECHNOLOGY
  • ISSN:   1748-3387 EI 1748-3395
  • 通讯作者地址:   MIT
  • 被引频次:   25
  • DOI:   10.1038/NNANO.2016.214
  • 出版年:   2017

▎ 摘  要

Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics(1-4). Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong non-local transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Unlike other approaches used for realizing helical states(3-7), the graphene electron-hole bilayer can be used to build new 1D systems incorporating fractional edge states(8,9). Indeed, we are able to tune the bilayer devices into a regime hosting fractional and integer edge states of opposite chiralities, paving the way towards 1D helical conductors with fractional quantum statistics(10-13).