▎ 摘　　要

We investigate the noise in single layer graphene devices from equilibrium to far-from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (V-SD). While the Hooge's relation is not the case around the charge neutrality point, we found that it is recovered at very low V-SD region. We propose that the depinning of the electron-hole puddles is induced at finite V-SD, which may explain this anomalous noise behavior. (C) 2016 AIP Publishing LLC.