▎ 摘　　要

Recently, gallium nitride (GaN) films grown on graphene have been widely studied. Here, we have grown low-threading-dislocation-density GaN films on graphene by hydride vapor phase epitaxy (HVPE). The full widths at half maximum (FWHMs) of X-ray rocking curves (XRCs) of the GaN films were 276 and 350 arcsec at the 0002 and 1012 reflections, respectively. This shows that the threading dislocation densities are on the order of magnitude of 10(8)cm(-2), which is consistent with the results of cathodoluminescence (CL). (C) 2017 The Japan Society of Applied Physics