▎ 摘　　要

We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 degrees C below the graphitization temperature (T-G) of SiC. We find that ion implantation of SiC lowers the T-G, allowing selective graphene growth at temperatures below the T-G of pristine SiC and above T-G of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682479]