▎ 摘　　要

Gamma radiation (gamma) exposure was used in dye-sensitised solar cell application to improve the power conversion efficiency. Nickel oxide/reduced graphene oxide (NiO/rGO) as the photoanode layer was prepared by chemical bath deposition method. The NiO/rGO samples were used as the control to analyse the NiO/rGO exposed to gamma (NiO/rGO-gamma). XRD, FESEM and UV-Vis measurement were conducted to study the structure, morphology and the optical analysis of the samples. NiO/rGO-gamma nanoflowers were observed through FESEM images with improved morphology. The porosity of the thin films was also increased after the exposure of gamma radiation. The increased energy band gap of NiO/rGO-gamma annealed at 400 degrees C exhibited higher power conversion efficiency of 1.03% with J(sc), V-oc anf FF of 29 mA/cm(2), 0.15 and 0.3 V, respectively.