▎ 摘　　要

Hanle spin precession measurements are a common method to extract the spin transport properties of graphene. In epitaxial graphene on silicon carbide, these measurements show unexpected behavior, due to presumed localized states in the carbon buffer layer that is present between the channel and the substrate. As a consequence, the Hanle curve narrows in its magnetic field dependence and can show an unconventional shape, which has been experimentally observed and modeled in previous studies. Here, we extend the previously developed model by assuming that the localized states are charge traps, that have a power-law distribution of trapping times. Our simulations show that the energy dependence of these trapping times can be extracted from the temperature evolution of the Hanle curve, which was previously observed in experiments. Our extended model gives better insight into what processes play a role when a spin channel is coupled to localized states and their relation to the experimental observations.