▎ 摘　　要

We report a correlation between carrier mobility and defect density in large-scaled graphene films prepared by chemical vapor deposition (CVD). Raman spectroscopy is used for investigating the layer number and the crystal quality of graphene films, and the defect density is estimated by the intensity ratios of the D and G peaks. By carefully controlling the growth parameters, especially the H-2/CH4 ratios during growth, and employing H-2 during cooling, monolayer-dominant graphene films can be obtained with different D peak intensities in Raman spectra, which show good correspondence with their carrier mobility obtained by Hall measurements. Also, a progressive shift of neutrality points to a more negative gate voltage is observed with the increase in defect density. Both the connections of carrier mobility and the shift of neutrality points to a negative direction in relation to the defect density in graphene are observed for the first time in CVD-grown graphene films. With the best growth conditions, a cm-scaled graphene film with carrier mobility of similar to 1350 cm(2) V-1 s(-1) (p-type in air) can be obtained.