• 文献标题:   Weak-Field Hall Effect in Graphene with Long-Range Scatterers
  • 文献类型:   Article
  • 作  者:   NORO M, ANDO T
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
  • ISSN:   0031-9015
  • 通讯作者地址:   Tokyo Inst Technol
  • 被引频次:   11
  • DOI:   10.7566/JPSJ.85.014708
  • 出版年:   2016

▎ 摘  要

The weak-field Hall conductivity is calculated in graphene containing scatterers with long-range potential within a self-consistent Born approximation. In the clean limit, the diagonal conductivity and the Hall conductivity are shown to agree with the Boltzmann results. Explicit numerical calculations are performed for scatterers with a Gaussian potential with the range d, showing that the Hall conductivity as well as the density of states and the diagonal conductivity becomes universal when the energy is scaled by 1/d. For more realistic charged impurities, the singularity appearing in the Hall coefficient near the charge neutrality point is shown to be sensitive to environmental dielectric material.