▎ 摘　　要

The excellent electrical properties of graphene make it have broad application in electronic devices [1-2]. Grain boundaries and wrinkles will greatly scatter charge carriers of graphene [3-4]. Graphene with less gain boundaries and wrinkles are highly demanded. At present, the chemical vapor deposition (CVD) of graphene on Cu foil/Cu-Ni surfaces has been known as the simplicity and low cost way to prepare large-sized high-quality graphene films. However, the suppressing nucleation density method also leads to a low growth rate. Here we demonstrate a surface oxygen supply strategy for the Cu-Ni substrate on sapphire to form a Cu-Ni-O surface. With the Cu-Ni-O surface, the growth rate of graphene is greatly increased to 240 mu m/min. The as-synthesized graphene has less wrinkles, and a small 2D peaks FWHM of 25.2 cm(-1). The room temperature sheet resistance reaches 267 Omega/square. This study provides a meaningful method to time-saving synthesis of high-quality graphene.