▎ 摘　　要

To overcome the nonlinear distortion inherent in analog ICs based on Si-MOSFETs, we report here the graphene-silicon hybrid analog amplifier ICs that integrate graphene field-effect transistor (GFET) and Si-MOSFET components. By fabricating homogeneous GFETs on a silicon wafer with prefabricated Si-MOSFETs, we obtained the hybrid ICs that neatly incorporate the high linearity of GFETs. The high-linearity analog amplifier ICs can thus be realized simply using basic MOSFET circuit configurations, without requiring complicated calibration designs. This hybrid integration principle may enable immediate practical applications of graphene electronics.