• 文献标题:   Characterization of graphene synthesized by low-pressure chemical vapor deposition using N-Octane as precursor
  • 文献类型:   Article
  • 作  者:   BARBOSA AD, FIGUEROA NJS, MENDOZA CD, PINTO AL, FREIRE FL
  • 作者关键词:   graphene, noctane, cvd, synthesis temperature, raman spectroscopy, scanning tunneling spectroscopy
  • 出版物名称:   MATERIALS CHEMISTRY PHYSICS
  • ISSN:   0254-0584 EI 1879-3312
  • 通讯作者地址:   Pontificia Univ Catolica Rio de Janeiro
  • 被引频次:   2
  • DOI:   10.1016/j.matchemphys.2018.08.031
  • 出版年:   2018

▎ 摘  要

We report single-layer graphene synthesis using high-carbon content N-Octane as precursor. Unlike methanol, ethanol and other liquid carbon precursors, N-Octane is oxygen free and its molecular structure is simply a common hydrocarbon. Optimal precursor pressure for synthesis was found to be at 5-20 mTorr range, as at higher partial pressures we have achieved bilayer and few-layer coverage of the copper substrates with {111} plane parallel to the surface, as revealed by Raman spectroscopy. We could lower the synthesis temperature down to 850 degrees C and still obtained graphene layers with low concentration of defects. For the complete coverage of the substrates, we report shorter than usual synthesis time, of no more than 5 min. Characterization of gra- phene layers were performed using Raman scattering spectroscopy and mapping, UV-vis transmittance as well as atomic force microscopy, scanning tunneling microscopy and scanning tunneling spectroscopy.