• 文献标题:   Anomalous electron-electron interactions in epitaxial graphene on SiC
  • 文献类型:   Article
  • 作  者:   YANG Y, GAO KH, WANG WJ, YU G, SUN Y, ZHANG XH, LI ZQ
  • 作者关键词:   electronelectron interaction, monolayer graphene, gas absorption
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.1016/j.carbon.2021.08.028 EA AUG 2021
  • 出版年:   2021

▎ 摘  要

Electron-electron interactions (EEI) play a pivotal role in the transport behavior of carriers confined in a two-dimensional system. The strength of the interaction can be tuned by changing carrier concentration in a conventional two-dimensional system, while it expectedly cannot be controlled in monolayer graphene with a linear dispersion relation since the interaction parameter is not related to carrier concentration. Here, an anomalous carrier-concentration dependence of the EEI is observed in epitaxial graphene on SiC. From quantum transport measurement, a logarithmic temperature dependence of the Hall coefficient is obtained, which is a manifestation of the EEI. From the logarithmic temperature dependence, the EEI-related factor K-ee is extracted. Unexpectedly, the extracted K-ee shows an increase on increasing carrier concentration, which is further confirmed by analyzing logarithmic correction to the Drude conductivity. This can be attributed to the carrier-concentration dependence of Fermi-liquid constant F-0(a) due to gas absorption, which offers a route to control the EEI in graphene. (C) 2021 Elsevier Ltd. All rights reserved.