• 文献标题:   Electronic States at the Graphene-Hexagonal Boron Nitride Zigzag Interface
  • 文献类型:   Article
  • 作  者:   DROST R, UPPSTU A, SCHULZ F, HAMALAINEN SK, ERVASTI M, HARJU A, LILJEROTH P
  • 作者关键词:   graphene, hexagonal boron nitride, interface, zigzag, scanning tunneling microscopy stm
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Aalto Univ
  • 被引频次:   53
  • DOI:   10.1021/nl501895h
  • 出版年:   2014

▎ 摘  要

The electronic properties of graphene edges have been predicted to depend on their crystallographic orientation. The so-called zigzag (ZZ) edges haven been extensively explored theoretically and proposed for various electronic applications. However, their experimental study remains challenging due to the difficulty in realizing clean ZZ edges without disorder, reconstructions, or the presence of chemical functional groups. Here, we propose the ZZ-terminated, atomically sharp interfaces between graphene and hexagonal boron nitride (BN) as experimentally realizable, chemically stable model systems for graphene ZZ edges. Combining scanning tunneling microscopy and numerical methods, we explore the structure of grapheneBN interfaces and show them to host localized electronic states similar to those on the pristine graphene ZZ edge.