▎ 摘　　要

Graphene (Gr) film grown by the chemical vapor deposition (CVD) method has recently received intense attention in optoelectronic devices. As an alternative, the low cost graphene-oxide (GO) fabricated by a solution process is more promising for practical application. Here, we have fabricated a GO film on copper foil and then reduced it into a conductive film by high temperature annealing. It is found that the photoelectric properties of the reduced-graphene-oxide (r-GO) film are strongly dependent on the annealing temperature and film thickness. A thicker r-GO film under higher temperature annealing usually has better conductivity. By optimizing the reduction conditions of the GO films, the highest power conversion efficiency (PCE) of 3.36% can be achieved for a r-GO/Si solar cell. This value is currently the record efficiency for the r-GO/Si device architecture.