▎ 摘　　要

The properties of a point field-emission cathode representing a structure in the form of a silicon carbide tip coated with a thin graphene film are assessed. For the point cathode with the graphene coating, the current-voltage characteristics are constructed in the Fowler-Nordheim coordinates; the work functions phi of the point cathode are calculated by their slope. The possibility of forming heavily doped n (+)-SiC on the point surface by the sublimation of low-threshold field emission cathodes with low threshold electric fields and field-emission currents is shown.