• 文献标题:   Carrier scattering in graphene nanoribbon field-effect transistors
  • 文献类型:   Article
  • 作  者:   OUYANG YJ, WANG XR, DAI HJ, GUO J
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ Florida
  • 被引频次:   32
  • DOI:   10.1063/1.2949749
  • 出版年:   2008

▎ 摘  要

The elastic scattering mean free path (mfp) in a graphene nanoribbon (GNR) is characterized to be short. In the absence of other scattering mechanisms, elastic scattering has a large effect on the source-drain current of a GNR field-effect transistor due to its quasi-one-dimensional channel. In the presence of optical phonon scattering, the effect of elastic scattering is reduced. The coupling of inelastic, short-mfp optical phonon scattering to elastic scattering results in an increase rather than a decrease of the source-drain current. Improving the GNR edge quality promises significant on-current improvement.