▎ 摘　　要

Chemical vapor deposition (CVD) has emerged as an important method for the preparation and production of graphene for various applications. This study analyzes previous work on various parameters that affect the properties of graphene synthesized through the CVD method. These parameters include the growth temperature, the growth time, and the flow rate of the carbon precursor. The characteristics of graphene synthesized under different conditions are compared in terms of the number of layers and the defect concentration, as determined by Raman spectroscopy and scanning electron microscopy (SEM). This comparison reveals that graphene grown on copper with a relatively low flow rate of precursor, a short growth time, and a high growth. temperature exhibits the best quality. The optimum parameters required to produce graphene with high quality and with a low concentration of defects, both of which are essential in the development of graphene as a sensing material, are ascertained in this review.