▎ 摘　　要

Due to its low chemical stability, the surface of black phosphorus (Bp) easily oxidizes to form an oxide layer, which can be used to realize effective electronic tunneling devices. Here, we reported a controllable graphene/Bp van der Waals heterostructure tunneling device by controlling the oxidation etching time. We developed a method for fabricating oxide layers with controllable thickness and realized different thickness oxide layers in different regions of the sample. Through comparative experiments, it was found that as the etching time increased, the tunneling effect was gradually enhanced, and a rectification effect was revealed that also tended to increase. The controllable Bp tunneling effect could help in the design of novel optoelectronic devices.