▎ 摘　　要

Due to the ultra-high carrier mobility and ultralow resistivity of Graphene channel, a Graphene field effect transistor (GFET) is an interesting candidate for future RF and microwave electronics. In this paper, the introduction and review of existing compact circuit-level model of GFETs are presented. A compact GFET model based on drift-diffusion transport theory is then implemented in Verilog-A for RF/microwave circuit analysis. Finally, the GFET model is used to design a GFET-based distributed amplifier (DA) using advanced design system (ADS) tools. The simulation results demonstrate a gain of 8 dB, an input/output return loss less than -10 dB, -3 dB bandwidth from DC up to 5 GHz and a dissipation of about 60.45 mW for a 1.5 V power supply. The main performance characteristics of the distributed amplifier are compared with 0.18 mu m CMOS technology.