• 文献标题:   Graphene single-electron transistor as a spin sensor for magnetic adsorbates
  • 文献类型:   Article
  • 作  者:   GONZALEZ JW, DELGADO F, FERNANDEZROSSIER J
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Int Iberian Nanotechnol Lab INL
  • 被引频次:   13
  • DOI:   10.1103/PhysRevB.87.085433
  • 出版年:   2013

▎ 摘  要

We study single-electron transport through a graphene quantum dot with magnetic adsorbates. We focus on the relation between the spin order of the adsorbates and the linear conductance of the device. The electronic structure of the graphene dot with magnetic adsorbates is modeled through numerical diagonalization of a tight-binding model with an exchange potential. We consider several mechanisms by which the adsorbate magnetic state can influence transport in a single-electron transistor: tuning the addition energy, changing the tunneling rate, and in the case of spin-polarized electrodes, through magnetoresistive effects. Whereas the first mechanism is always present, the others require that the electrode has to have either an energy-or spin-dependent density of states. We find that graphene dots are optimal systems to detect the spin state of a few magnetic centers. DOI: 10.1103/PhysRevB.87.085433