▎ 摘　　要

We report a novel approach for direct fabrication of graphene oxide nanoribbons (GONRs) on the 3-aminopropyltriethoxysilane (APTES)-modified SiOx surface with varied widths and lengths by plasma etching of graphene oxide (GO) wrinkles (GOWs), in which top layers of GOWs are used as sacrificial layers AFM images show that single- and double-layer GONRs are easily achieved, and also confirm that these GONRs are obtained from GOWs, which normally form during absorption of large GO sheets with a size of at least several micrometers on APTES-modified SiOx substrates. Raman mapping and scanning electron microscopy (SEM) were performed to further confirm the attainment of GONRs by this method. A GONR with a width as narrow as 15 nm was obtained Reduced graphene oxide nanoribbons (rGONRs) can be readily obtained by chemical reduction of GONRs.