• 文献标题:   Influence of Cu substrate topography on the growth morphology of chemical vapour deposited graphene
  • 文献类型:   Article
  • 作  者:   XIAO Y, KIM H, MATTEVI C, CHHOWALLA M, MAHER RC, COHEN LF
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Univ London Imperial Coll Sci Technol Med
  • 被引频次:   8
  • DOI:   10.1016/j.carbon.2013.06.090
  • 出版年:   2013

▎ 摘  要

Raman spectroscopic maps were used to study the local properties of graphene films as grown on corrugated copper foils, by chemical vapour deposition, and after transfer onto SiO2(300 nm)/Si substrates. Analysis of the Raman peaks show the films exhibit a striped periodic pattern of single- and bi-layer graphene. By performing simultaneous AFM-Raman line maps of the as grown film on Cu we find that the layer growth shows a strong correlation to substrate topography. As a result, compressively strained non-AB stacked bi-layer graphene forms preferentially along the ridges, whilst single-layer graphene grows inside the trenches, of the Cu foil topography. These experimental results suggest that surface mobility is not the dominating factor determining control of layer number in such growth regimes. (C) 2013 The Authors. Published by Elsevier Ltd. All rights reserved.