• 文献标题:   Magneto-electronic and optical properties of Si-doped graphene
  • 文献类型:   Article
  • 作  者:   SHIH PH, DO TN, HUANG BL, GUMBS G, HUANG DH, LIN MF
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Natl Cheng Kung Univ
  • 被引频次:   7
  • DOI:   10.1016/j.carbon.2018.12.040
  • 出版年:   2019

▎ 摘  要

The rich and unique magnetic quantization phenomena of Si-doped graphene defect systems for various concentrations and configurations are fully explored by using the generalized tight-binding model. The non-uniform bond lengths, site energies and hopping integrals, as well as a uniform perpendicular magnetic field (B-z(z) over cap) are taken into account simultaneously. The quantized Landau levels (LLs) are classified into four different groups based on the probability distributions and oscillation modes. The main characteristics of the LLs are clearly reflected in the magneto-optical selection rules which cover the dominating Delta n = vertical bar n(v) - n(c)vertical bar = 0, the coexistent Delta n = 0 and Delta n = 1, along with the specific Delta n = 1. These rules for inter-LL excitations are attributed to the non-equivalence or equivalence of the A(i) and B-i sublattices in a supercell. The spectral intensity can be controlled by oscillator strength using a canonical momentum (vector potential) as well as by density of states using concentration and distribution of doped Si atoms. (C) 2018 Elsevier Ltd. All rights reserved.