• 文献标题:   Electronic structure tuning and band gap opening of graphene by hole/electron codoping
  • 文献类型:   Article
  • 作  者:   DENG XH, WU YQ, DAI JY, KANG DD, ZHANG DY
  • 作者关键词:   electronic band structure, graphene, doping, densityfunctional theory
  • 出版物名称:   PHYSICS LETTERS A
  • ISSN:   0375-9601
  • 通讯作者地址:   Natl Univ Def Technol
  • 被引频次:   54
  • DOI:   10.1016/j.physleta.2011.08.070
  • 出版年:   2011

▎ 摘  要

A pathway to open the band gap of graphene by p-n codoping is presented according to the first principles study. Two models are used: Lithium adsorbed on Boron-doped graphene (BC) and Boron-Nitrogen (B/N) codoping into graphene. The stability of Lithium adsorbed on BC is firstly analyzed, showing that the hollow site is the most stable configuration, and there is no energy barrier from some metastable configurations to a stable one. After the p-n codoping, the electronic structures of graphene are modulated to open a band gap with width from 0.0 eV to 0.49 eV, depending on the codoping configurations. The intrinsic physical mechanism responsible for the gap opening is the combination of the Boron atom acting as hole doping and Nitrogen (Lithium) as electron doping. (C) 2011 Elsevier B.V. All rights reserved.