▎ 摘　　要

Since its discovery, graphene has been the star material either in scientific studies or potentially technical applications. There are various methods for preparation of graphene films (e.g. mechanical exfoliation, epitaxial growth, molecular assembly, chemical vapour deposition, thermal photocatalysis, and chemical or electrochemical reduction of graphene oxide). In this article, we briefly reviewed the growths of three-dimensional graphene films on metallic and non-metallic substrates using plasma enhanced chemical vapour deposition by emphasising on their growth mechanisms. Since this technique is still in its early stage, the general absence in understanding of the graphene growth processes is thus needed to be clarified. Moreover the utility of plasma enhanced chemical vapour deposition allows synthesis of graphene films at relatively low temperatures and therefore it is possible to directly grow graphene on the substrates that could not survive at high temperatures.