▎ 摘　　要

Conventional Chemical Vapor Deposition (CVD) techniques require the use of a catalyst surface and high temperature of growth (similar to 1000 degrees C) to grow graphene, which renders the process incompatible with arbitrary substrates. While post-synthesis transfer of graphene onto required substrates is widely used, it causes undesirable effects such as wrinkles/folds/cracks and unintentional doping. Here, we report low-temperature growth of graphene at 650 degrees C on non-catalytic SiO2 and quartz substrates using a one-step, rapid Plasma Enhanced Chemical Vapor Deposition (PECVD) process. We simultaneously study PECVD graphene growth on a traditional catalytic material such as copper and show that the growth substrate does not play any role in the dissociation of hydrocarbon precursor during PECVD, thus eliminating the possibility of a catalytic effect. Using several characterization techniques, we observe an increasing rate of growth from SiO2 to quartz to copper, which can be attributed to different adsorption and diffusion energies of plasma radicals on these substrates. As opposed to thermal CVD growth on copper, which is self-limiting, the PECVD method developed here is scalable in terms of number of layers, allowing its adept integration in commercial devices. (C) 2015 Elsevier Ltd. All rights reserved.