• 文献标题:   THOMAS-FERMI AND POISSON MODELING OF GATE ELECTROSTATICS IN GRAPHENE NANORIBBON
  • 文献类型:   Article
  • 作  者:   ANDRIJAUSKAS T, SHYLAU AA, ZOZOULENKO IV
  • 作者关键词:   graphene, thomasfermi approximation, poisson s equation
  • 出版物名称:   LITHUANIAN JOURNAL OF PHYSICS
  • ISSN:   1648-8504
  • 通讯作者地址:   Vilnius State Univ
  • 被引频次:   9
  • DOI:   10.3952/physics.v52i1.2270
  • 出版年:   2012

▎ 摘  要

We describe a simple graphene nanoribbon and bottom gate system and present numerical algorithms for solving Poisson's and Thomas-Fermi equations for electrons in the graphene nanoribbon. The Poisson's equation is solved using finite difference and finite element methods. Using the Poisson and Thomas-Fermi equations we calculate an electrostatic potential and surface electron density in the graphene nanoribbon. Finally, the Poisson-Thomas-Fermi model for the graphene nanoribbon is compared to a tight-binding Hartree model. The results show a good correspondence with the tight-binding model. The developed solver of the Poisson's equation can be used in the future calculations of more complex graphene and gate systems.