▎ 摘　　要

In this paper, we perform a modeling and simulation study on strained armchair graphene nanoribbon (AGNR). Two uniaxial strain models based on a tight binding method are compared with results from first-principles calculation. Tunneling field effect transistors (TFETs) with channels made of strained AGNR of different widths are modeled and simulated by a ballistic quantum transport model based on nonequilibrium Green's function and nonparabolic effective mass approximation. Compared with TFETs with narrow AGNR, those with strained wide AGNR can achieve better device performance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456533]