▎ 摘　　要

The present work reports a modification in the design of the previously known Ag/Ag2S neuron-inspired devices by the addition of a modulating layer of graphene oxide (GO). The Ag2S/GO structures were fabricated with a simple yet effective method consisting of the sulfurization of high-purity silver wires dip-coated in GO solution. The structure was observed to maintain the switching characteristics of Ag2S, but also to exhibit tunneling OFF state currents modulated by the GO thin film layer. This result was also confirmed through the direct observation of the Ag2S/GO surface with a scanning electron microscope. The notable volatility-based neuromorphic properties observed in Ag2S were enhanced in the presence of GO, and a switching model is proposed considering the present experimental results. The ultra-thin insulating nature of GO emphasizes its potential modulating capabilities, and the results suggest that GO may be an important addition for future electrochemical resistive switching based neuron-inspired devices. (C) 2019 The Japan Society of Applied Physics