• 文献标题:   Stacking Boundaries and Transport in Bilayer Graphene
  • 文献类型:   Article
  • 作  者:   SANJOSE P, GORBACHEV RV, GEIM AK, NOVOSELOV KS, GUINEA F
  • 作者关键词:   bilayer graphene, electrocnic transport, magnetotranspont, manybody instabilitie, stacking boundarie, soliton
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   CSIC
  • 被引频次:   44
  • DOI:   10.1021/nl500230a
  • 出版年:   2014

▎ 摘  要

Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few millielectronvolts. This behavior has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly, however, some samples of similar mobility exhibit good metallic properties with a minimal conductivity of the order of 2e(2) /h. Here, we propose an explanation for this dichotomy, which is unrelated to electron interactions and based instead on the reversible formation of boundaries between stacking domains ("solitons"). We argue, using a numerical analysis, that the hallmark features of the previously inferred many-body insulating state can be explained by scattering on boundaries between domains with different stacking order (AB and BA). We furthermore present experimental evidence, reinforcing our interpretation, of reversible switching between a metallic and an insulating regime in suspended bilayers when subjected to thermal cycling or high current annealing.