• 文献标题:   Unexpectedly high thermal boundary resistance of Cr/graphene/SiO2 structure
  • 文献类型:   Article
  • 作  者:   ZHAN TZ, WANG HD, XU YB
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922 EI 1347-4065
  • 通讯作者地址:   Natl Inst Mat Sci
  • 被引频次:   1
  • DOI:   10.7567/JJAP.56.055101
  • 出版年:   2017

▎ 摘  要

We measured the thermal resistances of the Au/graphene/SiO2, Au/Ti/graphene/SiO2, and Au/Cr/graphene/SiO2 structures. The thermal resistances of the three structures were found to be significantly higher than those of the corresponding graphene-free structures, indicating that even monolayer graphene can greatly increase the thermal boundary resistance at metal/SiO2 interfaces. Furthermore, the thermal resistance of the Au/Cr/graphene/SiO2 structure is unexpectedly significantly higher than those of the other two structures, indicating that the diffusion mismatch model (DMM) fails to predict the thermal boundary resistance at metal/graphene interfaces. The poly(methyl methacrylate) (PMMA) residue contamination layer on the graphene surface may play an important role in increasing the thermal resistances of metal/graphene/SiO2 structures. Also, transition metal/graphene and transition metal/PMMA interactions may also affect the thermal boundary resistance. (C) 2017 The Japan Society of Applied Physics