• 文献标题:   Atomic control of strain in freestanding graphene
  • 文献类型:   Article
  • 作  者:   XU P, YANG YR, BARBER SD, ACKERMAN ML, SCHOELZ JK, QI D, KORNEV IA, DONG LF, BELLAICHE L, BARRAZALOPEZ S, THIBADO PM
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Univ Arkansas
  • 被引频次:   53
  • DOI:   10.1103/PhysRevB.85.121406
  • 出版年:   2012

▎ 摘  要

In this study, we describe an experimental approach based on constant-current scanning tunneling spectroscopy to controllably and reversibly pull freestanding graphene membranes up to 35 nm from their equilibrium height. In addition, we present scanning tunneling microscopy (STM) images of freestanding graphene membranes with atomic resolution. Atomic-scale corrugation amplitudes 20 times larger than the STM electronic corrugation for graphene on a substrate were observed. The freestanding graphene membrane responds to a local attractive force created at the STM tip as a highly conductive yet flexible grounding plane with an elastic restoring force. We indicate possible applications of our method in the controlled creation of pseudomagnetic fields by strain on single-layer graphene.