• 文献标题:   Nonequilibrium breakdown of quantum Hall state in graphene
  • 文献类型:   Article
  • 作  者:   SINGH V, DESHMUKH MM
  • 作者关键词:   critical current, current density, graphene, landau level, monolayer, quantum hall effect
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Tata Inst Fundamental Res
  • 被引频次:   22
  • DOI:   10.1103/PhysRevB.80.081404
  • 出版年:   2009

▎ 摘  要

In this Rapid Communication we experimentally probe the nonequilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density (similar to 1 A/m). The measured critical currents for dissipationless transport in the vicinity of integer filling factors show a dependence on filling factor. The breakdown can be understood in terms of inter Landau level (LL) scattering resulting from mixing of wave functions of different LLs. To further study the effect of transverse electric field, we measured the transverse resistance between the nu=2 to nu=6 plateau transition for different bias currents and observed an invariant point.