• 文献标题:   Delay time and Hartman effect in strain engineered graphene
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   CHEN X, DENG ZY, BAN Y
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Shanghai Univ
  • 被引频次:   12
  • DOI:   10.1063/1.4873893
  • 出版年:   2014

▎ 摘  要

Tunneling times, including group delay and dwell time, are studied for massless Dirac electrons transmitting through a one-dimensional barrier in strain-engineered graphene. The Hartman effect, the independence of group delay on barrier length, is induced by the strain effect, and associated with the transmission gap and the evanescent mode. The influence of barrier height/length and strain modulus/direction on the group delay is also discussed, which provides the flexibility to control the group delay with applications in graphene-based devices. The relationship between group delay and dwell time is finally derived to clarify the nature of the Hartman effect. (C) 2014 AIP Publishing LLC.