▎ 摘　　要

The fine control of graphene doping levels over a wide energy range remains a challenging issue for the electronic applications of graphene. Here, the controllable doping of chemical vapor deposited graphene, which provides a wide range of energy levels (shifts up to +/- 0.5 eV), is demonstrated through physical contact with chemically versatile graphene oxide (GO) sheets, a 2D dopant that can be solution-processed. GO sheets are a p-type dopant due to their abundance of electron-withdrawing functional groups. To expand the energy window of GO-doped graphene, the GO surface is chemically modified with electron-donating ethylene diamine molecules. The amine-functionalized GO sheets exhibit strong n-type doping behaviors. In addition, the particular physicochemical characteristics of the GO sheets, namely their sheet sizes, number of layers, and degree of oxidation and amine functionality, are systematically varied to finely tune their energy levels. Finally, the tailor-made GO sheet dopants are applied into graphene-based electronic devices, which are found to exhibit improved device performances. These results demonstrate the potential of GO sheet dopants in many graphene-based electronics applications.