▎ 摘　　要

Scalable and routine integration of chemically exfoliated, graphene-based materials such as graphene oxide (GO) and reduced graphene oxide (rGO) into standard microelectronic fabrication is a tremendous technological challenge, blocking their advancement toward real applications. A unique approach for wafer-scale fabrication of rGO devices by a synergistic combination of chemically exfoliated GO with photolithography processing is realized. Using graphite powder as source material, a GO solution is produced in a newly optimized, low-temperature exfoliation and desalination protocol, resulting in high-quality GO and confirmed by various characterization techniques. As substrates, 4 in. Si/SiO2 or glass wafers were first silanized in a well-controlled, gas-phase procedure. Large-area GO thin films are then realized by standard spin-coating resulting in highly homogeneous, covalently bound layers of controllable thicknesses of 3-7 nm depending on the amount of spin-coatings. The robust thin films undergo routine photolithography for device fabrication, including reduction via thermal annealing into conductive rGO. The top-down fabricated rGO devices display high uniformity with electrical resistances varying within only one order of magnitude over wafer-scale and device yields as high as approximate to 93% on a wafer. The novel front-end-of-line GO integration protocol offers robust electrical performances for future implementation toward various sensor applications.