• 文献标题:   Quantum Dots at Room Temperature Carved out from Few-Layer Graphene
  • 文献类型:   Article
  • 作  者:   BARREIRO A, VAN DER ZANT HSJ, VANDERSYPEN LMK
  • 作者关键词:   graphene, quantum dot, quantum transport, singleelectron transistor, molecular transport
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Delft Univ Technol
  • 被引频次:   48
  • DOI:   10.1021/nl3036977
  • 出版年:   2012

▎ 摘  要

We present graphene quantum dots endowed with addition energies as large as 1.6 eV, fabricated by the controlled rupture of a graphene sheet subjected to a large electron current in air. The size of the quantum dot islands is estimated to be in the 1 nm range. The large addition energies allow for Coulomb blockade at room temperature, with possible application to single-electron devices.