▎ 摘　　要

Graphene-semiconducting single-wall carbon nanotubes' (graphene-s-SWCNTs) thin-film photodetector based on a double-layer stacked heterostructure was fabricated. The carbon-based heterostructure exhibits excellent long-range van der Waals interactions. The as-fabricated device was demonstrated with an ultra-broadband photodetection characteristic with a high responsivity of 78 A/W at a visible wavelength and a fast response time of 80 mu s. Moreover, the high photoconductive gain based on the photogating effect for the graphene-s-SWCNTs device was realized. In addition, the temperature-dependent photoresponse performance was also demonstrated. Benefiting from the high photoconductive gain, ultra-fast response time, and high stable quality of carbon materials, our devices exhibit great potential applications for high sensitivity detection to weak target signals in extreme environments. Published by AIP Publishing.