▎ 摘　　要

We investigate graphene devices patterned with a narrow band of holes perpendicular to the current flow, a few-row graphene antidot lattice (FR-GAL). Theoretical reports suggest that a FR-GAL can have a bandgap with a relatively small reduction of the transmission compared to what is typical for antidot arrays devices. Graphene devices were fabricated using 100 keV electron beam lithography (EBL) for nanopatterning as well as for defining electrical contacts. Patterns with hole diameter and neck widths of order 30 nm were produced, which is the highest reported pattern density of antidot lattices in graphene reported defined by EBL. Electrical measurements showed that devices with one and five rows exhibited field effect mobility of similar to 100 cm(2)/Vs, while a larger number of rows, around 40, led to a significant reduction of field effect mobility (< 5 cm(2)/Vs). The carrier mobility was measured as a function of temperature, with the low-temperature behaviour being well described by variable range hopping, indicating the transport to be dominated by disorder.