• 文献标题:   The invention of graphene electronics and the physics of epitaxial graphene on silicon carbide
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   DE HEER WA
  • 作者关键词:  
  • 出版物名称:   PHYSICA SCRIPTA
  • ISSN:   0031-8949 EI 1402-4896
  • 通讯作者地址:   Georgia Inst Technol
  • 被引频次:   5
  • DOI:   10.1088/0031-8949/2012/T146/014004
  • 出版年:   2012

▎ 摘  要

Graphene electronics was officially invented at the Georgia Institute of Technology in 2003 after experimental and theoretical research on graphene properties starting from 2001. This paper focuses on the motivation and events leading to the invention of graphene electronics, as well as on recent developments. Graphene electronics was originally conceived as a new electronics paradigm to incorporate the room-temperature ballistic and coherent properties of carbon nanotubes in a patternable electronic material. Graphene on silicon carbide was chosen as the most suitable material. Other electronics schemes, involving transferred (exfoliated and chemical vapor deposition-produced) graphitic materials, that operate in the diffusive regime may not be competitive with standard methods and may therefore not significantly impact electronics. In recent years, epitaxial graphene has improved to the point where graphene electronics according to the original concept appears to be within reach. Beyond electronics, epitaxial graphene research has led to important developments in graphene physics in general and has become a leading platform for graphene science as well.