▎ 摘　　要

In this work, we investigated the effects of post rapid thermal annealing (RTA) at 800 degrees C on structure and optical properties of HfAlO films directly grown on graphene by atomic layer deposition (ALD). Raman spectra indicated that no defects were introduced into graphene through film growth and RTA process. X-ray photoelectric (XPS) spectra showed that RTA contributed to thermal decomposition of hydroxides. Transmission electron microscopy (TEM) images and grazing incidence X-ray diffraction (GIXRD) patterns indicated that the amorphous morphology stability of HfAIO during the RTA process, and spectroscopic ellipsometry (SE) showed that RTA had few effects on optical properties of HfAlO on graphene. (C) 2014 Elsevier B.V. All rights reserved.