▎ 摘　　要

Carbon-phototransistor with a structure of vertically grew graphene nanosheets embedded carbon (GNEC) film is fabricated through an electron-assisted sputtering-deposition method. This heterojunction phototransistor of GNEC/n-Si exhibits broad detection range (from 450 nm to 1200 nm), high photoresponsivity (1.298 x 10(4) A/W), and rapid response to on-off optical signals (4.91 mu s). Driven by the source-drain voltage applied to the GNEC film, electrons recycle in the circuit before recombination, which enhance drastically the usage efficiency of photo-induced carriers. Besides, GNEC film contains a large amount of graphene edges, which may serve as electron pump in the photovoltaic process based on the e-h separation in the p-n junction. The GNEC/n-Si phototransistor improves the responsivity of similar to 10(3) order compared with that of photodiode mode. (C) 2020 Elsevier Ltd. All rights reserved.