• 文献标题:   Laser and ion beams graphene oxide reduction for microelectronic devices
  • 文献类型:   Article
  • 作  者:   TORRISI L, HAVRANEK V, TORRISI A, CUTRONEO M, SILIPIGNI L
  • 作者关键词:   gaphene oxide, ion beam reduction, lithography, laser, ion beam, electronic device
  • 出版物名称:   RADIATION EFFECTS DEFECTS IN SOLIDS
  • ISSN:   1042-0150 EI 1029-4953
  • 通讯作者地址:   Univ Messina
  • 被引频次:   0
  • DOI:   10.1080/10420150.2019.1701456
  • 出版年:   2020

▎ 摘  要

Reduced graphene oxide (rGO) is a two-dimensional material, which is attracting increasing attention due to its special properties. It can be obtained by laser or ion beam irradiations of pristine graphene oxide (GO). It shows high mechanical resistance, considerable electric and thermal conductivity. All these rGO characteristics together with the high number of molecular species that can be embedded between its layers, make graphene oxide a potential material for electronic sensors or efficient support on which conductive strips, condensers, and micrometric electronic devices can be designed. In particular, as it is described in this paper, it is possible to carry out high spatial resolution lithography in GO by using a focused laser or micro ion beam in order to design macro, micro, and submicron geometrical structures. The use of the reduced graphene oxide for the laser and ion beam fabrication of electrical resistances and capacitances is presented.