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  • 文献标题:   Deducing the apparent flat-band position V-afb and the doping level of large area single layer graphene MOS capacitors
  • 文献类型:   Article, Proceedings Paper
  • 作　　者:   LIN HCD, ASSELBERGHS I, VAIS A, ARUTCHELVAN G, DELABIE A, HEYNS M, MOCUTA A, RADU I, THEAN A
  • 作者关键词:   large area, cvd graphene, frequency dispersion, apparent flatband, border trap
  • 出版物名称:   MICROELECTRONIC ENGINEERING
  • ISSN:   0167-9317 EI 1873-5568
  • 通讯作者地址:   IMEC
  • 被引频次:   2
  • DOI:   10.1016/j.mee.2015.04.104
  • 出版年:   2015

▎ 摘　　要

A capacitance-voltage (CV) study on large area CVD single layer graphene MOS capacitors has been carried out. The CV features are carefully examined to reveal the electronic origins of the observed frequency and bias dependence. In this study we investigate the frequency dispersion, propose the definition and extraction of the apparent flat-band V-afb, and finally perform the low temperature CV measurement to deduce the doping level of the graphene MOSCAPs. (C) 2015 Elsevier B.V. All rights reserved.