• 文献标题:   Line defects at the heterojunction of hybrid boron nitride-graphene nanoribbons
  • 文献类型:   Article
  • 作  者:   GHOSH D, PARIDA P, PATI SK
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS CHEMISTRY C
  • ISSN:   2050-7526 EI 2050-7534
  • 通讯作者地址:   Jawaharlal Nehru Ctr Adv Sci Res
  • 被引频次:   19
  • DOI:   10.1039/c3tc31784f
  • 出版年:   2014

▎ 摘  要

Using ab initio molecular dynamics (AIMD) simulations, we have explored the structural reconstruction of a special kind of line defect, which is constructed from tetragonal rings and is implanted at the heterojunction of hybrid boron nitride-graphene (BN-C) nanoribbons. It appears that nanoribbons get reconstructed in various ways to form different kinds of line defect depending upon the nature of the atoms at the heterojunction. Along with 5-8-5, we also report two new kinds of line defects, 8-8-8 and 7-4-7, at the heterojunction. The electronic and magnetic properties of the reconstructed nanoribbons are calculated using density functional theory (DFT). These nanoribbons show a wide range of electronic structures ranging from semiconducting to spin polarized metallic behaviour.