▎ 摘　　要

A method to modulate the threshold voltage of a graphene-ZnO barristor is investigated. Two types of polymers, polyethyleneimine (as an n-type dopant) and poly (acrylic acid) (as a p-type dopant), are used to pre-set the initial Fermi level of the graphene. The threshold voltage of the graphene barristor can be modulated between -2.0 V (n-type graphene) and 1.2 V (p-type graphene) while modulating the Fermi level of the graphene by 120 meV. This process provides a scalable and facile method to adjust the threshold voltage of graphene-semiconductor junction-based devices, which is a crucial function required to implement graphene-based electronic devices in integrated circuits.