▎ 摘　　要

Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon photonics, yet graphene absorbs only similar to 2.3% of light. Plasmonic metals can enhance the responsivity of graphene photodetectors, but may result in CMOS-incompatible devices, depending on the choice of metal. Here we propose a plasmon-enhanced photothermoelectric graphene detector using CMOS-compatible titanium nitride on the silicon-on-insulator platform. The device performance is quantified by its responsivity, operation speed, and noise equivalent power. Its bandwidth exceeds 100 GHz, and it exhibits a nearly flat photo-response across the telecom C-band. The photodetector responsivity is as high as 1.4 A/W (1.1 A/W external) at an ultra-compact length of 3.5 mu m, which is the most compact footprint reported for a graphene-based waveguide photodetector. Furthermore, it operates at zero-bias, consumes zero energy, and has an ultra-low intrinsic noise equivalent power (NEP < 20 pW/root Hz). (C) 2021 Optical Society of America